| PART |
Description |
Maker |
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| SFBFX86 BFX86 BFX86.MODE4 |
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| BDY96 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 10A I(C) | TO-3
Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=350 / Ic=10 / Hfe=15-60 / fT(Hz)=10M / Pwr(W)=40
|
Semelab
|
| BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
| BUX98AF BUX98AFR1 |
30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BUV11 BUV11.MOD |
20 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| BFY51 BFY51-QR-BE1 |
1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| BUR51S |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 60A I(C) | TO-3
Bipolar NPN Device in a Hermetically sealed TO3
|
Seme LAB
|
| BUY40 |
Bipolar NPN Device in a Hermetically sealed TO3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10
|
Seme LAB
|
| PO39 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-39
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.
|
Seme LAB
|
